The Structural and Optical Characterization of PbTeO Semiconductor Thin Film
- 1Department of Metallurgy and Materials Engineering, Faculty of Engineering, Karabük University
- 2Department of Science Education, Faculty of Education, Erciyes University
In this study, PbTeO semiconductor thin film has been produced by Chemical Bath Deposition (CBD) method onto glass substrates keeping 3 h at a bath temperature of 50 °C. The surface of the film was investigated with SEM. The structural properties of the thin film were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T %), reflectivity (R %), absorption coefficient (α), refraction index (n), extinction coefficient (k), dielectric constant (ɛ) of the thin film were investigated depending on deposition time and solution temperature by UV-VIS. The film thickness was measured with AFM (tapping mode). The absorption coefficient (α) was used to calculate the optical and electrical conductivities σopt and σe.
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@inproceedings{dgao117-p5,
title = {The Structural and Optical Characterization of PbTeO Semiconductor Thin Film},
author = {FATMA Meydaneri Tezel, İshak Kariper},
booktitle = {DGaO-Proceedings, 117. Jahrestagung},
year = {2016},
publisher = {Deutsche Gesellschaft für angewandte Optik e.V.},
issn = {1614-8436},
note = {Poster P5}
}
117. Annual Conference of the DGaO · Hannover · 2016