Optimization of SHG for high-brightness semiconductor laser diode radiation with large aberrations
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
guether [at] fbh-berlin [dot] de
The progress in high-brightness semiconductor lasers in the IR range stimulates the direct second harmonic generation (SHG) of their radiation for creation of short wavelength light sources. High-brightness cw-lasers are DFB-lasers, slab lasers, alfa-DFB-lasers, MOPA, tapered lasers and external resonator lasers within the actual power range between 0.4 and 7.7 W. Partially, those lasers show large aberrations, such as elliptical emission and/or strong astigmatism. The optimization of the SHG should take into consideration three items, simultaneously: a SHG-merit function, the residual aberrations of the micro-optics, and possible changes of the design parameters of the lasers. The examples comprise alfa-DFB-lasers and tapered lasers.
@inproceedings{guether2005p44,
author = {Güther, Reiner},
title = {{Optimization of SHG for high-brightness semiconductor laser diode radiation with large aberrations}},
booktitle = {DGaO-Proceedings 2005},
series = {DGaO-Proceedings},
eventtitle = {106. Jahrestagung der DGaO},
eventdate = {2005-05-17/2005-05-20},
venue = {Wrocław},
publisher = {Deutsche Gesellschaft für angewandte Optik e.V.},
year = {2005},
pages = {P44},
url = {https://dgao-proceedings.de/paper/106-p44}
}